Switching the Electronics Landscape
Diamond Electronics is developing a novel set of diamond-based field-effect transistor (FET) devices aiming to outperform existing Power Electronics devices in the market.
DELIVERING THE HIGHEST CLASS OF POWER MOSFET DEVICES TO THE MARKET
Commercially available off-the-shelf High Power products suffer from voltage density limitations due to their intrinsic physical breakdown field properties (i.e. SiC,GaN). As a result, each individual device/module needs to use a large number of copies in order to meet High Power performance requirements in this fast evolving market. Diamond Electronics individual devices reach up to 4x High Power performance thanks to its intrinsic 10x improved breakdown field properties, with far reduced peripheral cooling needs.
Unique and Innovative Technology
Wafer
Device
Diamond MOSFET
Discrete
Power Module
Case type
Leading the Electronic Revolution
Extreme Performance
Enhanced RF frequency envelope up to 120Ghz
Power Efficiency
Improved power density on single FET by 4x
Compactness
Reduces Volume and Weight of typical SiC devices by 5x
Thermally Efficient
Increases Operating Temperature 3x
Contact Us
HaMelacha St 6, Binyamina-Giv’at Ada,
Israe
